| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which peeling of an interlayer film can be prevented, even in a semiconductor device made of a thin WL-CSP (wafer level chip-side-package) having no mold layer, and to provide a manufacturing method therefor. <P>SOLUTION: The semiconductor device A is provided with a semiconductor chip 10', having an interlayer film 11 having electrodes for external connection arranged at predetermined positions, rewirings 12 being provided on the interlayer film 11 so as to be conducted to each of the electrodes, insulating layers 13 each of which covers respective the rewirings 12, pads 15 conducted with the rewirings 12 via an opening provided at the predetermined position of the insulating layer 13, and solder terminals 19 each being provided on the pads 15. The manufacturing method of the semiconductor device A has a step of providing a photosensitive resin film 17 on the insulating film 13, and a step of covering the external edge of the interlayer film 11 with the photosensitive resin film 17. <P>COPYRIGHT: (C)2008,JPO&INPIT |
