| 摘要 |
A buffer layer of a III-V compound semiconductor device grown by depositing III-V compound semiconductor layers on a silicon semiconductor substrate 21 has minimum stress and no dislocation propagation. Periodic recesses are formed on a surface of the silicon semiconductor substrate 21 and a Ga layer 41 and an As layer 61 are formed on opposite side surfaces of each recess, respectively. A GaAs strain superlattice layer 22 thus formed is used as the buffer layer. Dislocation is confined to the buffer layer which can be made thin. Stress and consequent warpage are reduced by the recesses.
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