发明名称 Vertical diffusion furnace and cap therefor
摘要 A vertical diffusion furnace and a cap therefor are provided to minimize diffusion non-uniformity in a diffusion furnace caused by the positioning of a reaction gas outlet. In the vertical diffusion furnace, a reaction gas outlet is formed in the lower portion of a cap and adapted to extend downward through a flange. Thus, is provided a means to maintain diffusion uniformity in the diffusion furnace to comply with the necessity of processing large diameter wafers needed for highly integrated semiconductor devices. Thereby, a decrease in the rate of productivity for operating such equipment due to its positioning of a reaction gas outlet is prevented.
申请公布号 US5753046(A) 申请公布日期 1998.05.19
申请号 US19960755160 申请日期 1996.11.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, SANG-KOOK;KIM, SANG-WOON
分类号 H01L21/22;C30B31/00;C30B31/06;H01L21/00;H01L21/18;(IPC1-7):C23C16/00;F27B1/00;F27B1/10 主分类号 H01L21/22
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