发明名称 |
Vertical diffusion furnace and cap therefor |
摘要 |
A vertical diffusion furnace and a cap therefor are provided to minimize diffusion non-uniformity in a diffusion furnace caused by the positioning of a reaction gas outlet. In the vertical diffusion furnace, a reaction gas outlet is formed in the lower portion of a cap and adapted to extend downward through a flange. Thus, is provided a means to maintain diffusion uniformity in the diffusion furnace to comply with the necessity of processing large diameter wafers needed for highly integrated semiconductor devices. Thereby, a decrease in the rate of productivity for operating such equipment due to its positioning of a reaction gas outlet is prevented.
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申请公布号 |
US5753046(A) |
申请公布日期 |
1998.05.19 |
申请号 |
US19960755160 |
申请日期 |
1996.11.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, SANG-KOOK;KIM, SANG-WOON |
分类号 |
H01L21/22;C30B31/00;C30B31/06;H01L21/00;H01L21/18;(IPC1-7):C23C16/00;F27B1/00;F27B1/10 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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