发明名称 CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a crucible for pulling a silicon single crystal, which has excellent durability and is inexpensive and with which a normal silicon single crystal wherein crystal lattice is free from formation of strain can be easily produced. SOLUTION: This crucible is constituted of a quartz crucible 15 for accommodating a silicon material and a graphite crucible 10 which is formed to surround the quartz crucible 15 from the outer side. The graphite crucible 10 is constituted by bringing the divided surfaces 110 and 120 of plural divided chips 11 and 12 into contact with each other so as to be built up. A projecting part 116 is provided at the divided surface 110 of a graphite divided chip 11 and a recessed part 125 corresponding to the projecting part 116 is provided on the divided surface 120 of the other graphite divided chip 12, and the graphite crucible 10 is constituted by engaging the corresponding projecting part 116 with the recessed part 125.
申请公布号 JP2002154892(A) 申请公布日期 2002.05.28
申请号 JP20000343968 申请日期 2000.11.10
申请人 IBIDEN CO LTD 发明人 YASUDA MASAHIRO
分类号 C30B29/06;C30B15/10;H01L21/208;(IPC1-7):C30B29/06 主分类号 C30B29/06
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