BURIED INVERTED GATE FIELD-EFFECT TRANSISTOR (BIGFET)

摘要

A method is provided, the method comprising forming a masking layer (1110) above a substrate layer (105), forming an opening (1100, 2100) in the masking layer (1110), the opening (1100, 2100) defining a channel region (800, 2005, 2400) in the substrate layer (105), and forming a buried gate conductor (715, 2015, 2115) in the substrate layer (105) below the channel region (800, 2005, 2400), using the opening (1100, 2100) to self-align the buried gate conductor (715, 2015, 2115). The method also comprises forming source/drain regions (120S, 120D) adjacent the channel region (800, 2005, 2400).