| 摘要 |
A method for fabricating a semiconductor device is provided to decrease a generation rate of a water mark by forming an oxide layer on a polycrystal silicon layer. A polycrystal silicon layer(340) implanted with impurities is formed on a semiconductor substrate(300), and an oxide layer(350) is formed on the polycrystal silicon layer to reform the polycrystal silicon layer into a hydrophilic layer. Prior to formation of the polycrystal silicon, an interlayer dielectric(310) is formed on the substrate which is connected to an active region, and a storage node oxide layer(330) is formed on the interlayer dielectric. After formation of the oxide layer, a storage node contact hole is formed in the storage node oxide layer, and a storage node electrode, a dielectric layer and a plate electrode are formed on the contact hole.
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