METHOD FOR FABRICATING CMOS IMAGE SENSOR

摘要

A method for manufacturing a CMOS image sensor is provided to bond an external driving circuit and a pad electrode to each other by preventing corrosion of the pad electrode due to a developer in a post-etch process for forming a color filter layer and a microlens. A pixel array part(P) and a logic array part(L) are defined on a semiconductor substrate. An electric wiring is formed on the semiconductor substrate. An interlayer dielectric(161) is formed on a front surface of the semiconductor substrate including the wiring. A pad electrode(153) is formed by depositing and patterning a metal material and an anti-reflection layer(154) on the interlayer dielectric. A protection layer is formed on a front surface of the substrate including the pad electrode. A via hole(172) is formed by removing selectively the protection layer. A color filter layer(140) is formed on the protective layer. A planarization layer(110) is formed to cover the color filter layer. A microlens corresponding to the color filter layer is formed on the planarization layer. The anti-reflection layer is removed from the exposed pad electrode between via holes.