| 摘要 |
<p>A thin film transistor is provided to form a semiconductor layer which is crystalline zinc oxide oriented with the c-axis perpendicular to the plane of a dielectric layer or the substrate by liquid-depositing a ZnO nano-disk composition. A TFT consists of a substrate, a gate electrode, a source electrode, a drain electrode, a gate dielectric layer and a ZnO semiconductor layer. A gate electrode(18) is formed on a substrate(16). A gate dielectric layer(14) is formed on the substrate. A source electrode(20) and a drain electrode(22) are formed on the gate dielectric layer. The ZnO semiconductor layer(12) is formed between the source electrode and the drain electrode.</p> |
