METHOD OF MANUFACTURING FLASH MEMORY DEVICE HAVING BLOCKING OXIDE FILM

摘要

A method for manufacturing a flash memory device having a blocking oxide layer is provided to suppress generation of leakage current by minimizing contents within a blocking oxide layer. A tunneling oxide layer(110) is formed on an upper surface of a semiconductor substrate(100). An electric charge storage layer(120) is formed on an upper surface of the tunneling oxide layer. A crystalline blocking oxide layer(130) is formed on an upper surface of the electric charge storage layer under a first temperature condition. A gate electrode(140) is formed on an upper surface of the blocking oxide layer. The first temperature is selected in a range of 500 to 1000 °C. The blocking oxide layer has a thickness of 150 to 250 Å.