| 摘要 |
<P>PROBLEM TO BE SOLVED: To detect impairment of a semiconductor power module due to internal wirings efficiently and accurately. <P>SOLUTION: Short-circuit pulses 15a and 15b of extremely short time not exceeding the short-circuit resistance are inputted from a control circuit 10 to the upper and lower arm elements (IGBT) 3a and 3b of a semiconductor power module, voltage drops in wirings 9a and 9b at that time are compared with reference values 7a and 7b respectively to determine element impairment if both reference values 7a and 7b are exceeded, thus detecting element impairment efficiently and accurately. <P>COPYRIGHT: (C)2009,JPO&INPIT |
