| 摘要 |
The device (100) has metal silicide based interface portions (119), and a rectangular silicon based element (104) placed on a dielectric layer (102). Each one of opposite faces of the silicon based element is completely covered by one of interface portions. The opposite faces are perpendicular to a face that is in contact with the dielectric layer. A surface of faces of the silicon element is equal to product of thickness and contact width of the silicon based element. Each portion is connected to metallic contacts (118) made of titanium or tungsten nitride. An independent claim is also included for a method for forming a resistivity measuring device. |
