| 摘要 |
<p>Disclosed is a method for manufacturing a silicon-based thin film photoelectric converter which is characterized in that a multilayer body (30) of double pin structure is formed by sequentially forming, on a transparent conductive film (2) formed on a substrate (1), a first p-type semiconductor layer (11), an i-type amorphous silicon-based photoelectric conversion layer (12), a first n-type semiconductor layer (13), a second p-type semiconductor layer (21), an i-type microcrystalline silicon-based photoelectric conversion layer (22), and a second n-type semiconductor layer (23) in the same plasma CVD chamber, and the first p-type semiconductor layer (11), the i-type amorphous silicon-based photoelectric conversion layer (12) and the first n-type semiconductor layer (13) are formed at a film-forming pressure in the plasma CVD chamber of 200-3000 Pa and a power density per unit electrode area of 0.01-0.3 W/cm2. By this method, a silicon-based thin film photoelectric converter having good quality and high photoelectric conversion efficiency can be highly efficiently manufactured at low cost by using a simple production apparatus.</p> |
