| 摘要 |
Disclosed in the present invention is a novel compound semiconductor usable in an application, such as a thermoelectric material, and a method of fabricating the same. According to the present invention, a compound semiconductor is a compound semiconductor in which a hetero metal is added thereto and the hetero metal is represented by chemical formula 1. In chemical formula 1, Me is at least one selected from the group comprising Zn, Mn, Ti, Mo, and Zr; x is between 2.5 and 3.0; a is more than or equal to 3.0 and is less than 3.5; y is more than 0; and z is less than 0. |
