Method for integrating thin-film transistors on an isolation region in an integrated circuit and resulting device

摘要

Methods for integrating core and I/O components in IC devices utilizing a TFT I/O device formed on STI regions, and the resulting devices are disclosed. Embodiments include forming STI and FinFET regions in a Si substrate, the FinFET region having first and second adjacent sections; forming a nitride layer and a silicon layer, respectively, over the STI region and both sections of the FinFET region; removing a first section of the silicon and nitride layers through a mask to expose the first FinFET section; implanting the exposed FinFET section with a dopant; removing remaining sections of the mask; removing a second section of the silicon and nitride layers through a second mask to expose the second FinFET section; implanting the second FinFET section with another dopant; removing remaining sections of the second mask; and forming a TFT on the remaining silicon layer, wherein the TFT channel includes the silicon layer.

主权项

1. A method comprising:
forming a shallow trench isolation (STI) region and a fin-type field-effect transistor (FinFET) region in a silicon (Si) substrate, the FinFET region having first and second adjacent sections; forming a nitride layer and a silicon layer, respectively, on an upper surface of the STI region and the first and second sections of the FinFET region; removing a first section of the silicon layer and the nitride layer through a mask to expose the first section of the FinFET region; implanting the first section of the FinFET region with a dopant; removing remaining sections of the mask; removing a second section of the silicon layer and the nitride layer through a second mask to expose the second section of the FinFET region; implanting the second section of the FinFET region with another dopant; removing remaining sections of the second mask; and forming a thin-film transistor (TFT) on an upper surface of the silicon layer above the STI region, wherein the TFT channel comprises the silicon layer.