SERIES-CONNECTED TRANSISTOR STRUCTURE

摘要

A series-connected transistor structure includes a first source, a first channel-drain structure, a second channel-drain structure, a gate dielectric layer, a gate, a first drain pad and a second drain pad. The first source is over a substrate. The first channel-drain structure is over the first source and includes a first channel and a first drain thereover. The second channel-drain structure is over the first source and substantially parallel to the first channel-drain structure and includes a second channel and a second drain thereover. The gate dielectric layer surrounds the first channel and the second channel. The gate surrounds the gate dielectric layer. The first drain pad is over and in contact with the first drain. The second drain pad is over and in contact with the second drain, in which the first drain pad and the second drain pad are separated from each other.

主权项

1. A series-connected transistor structure, comprising:
a first source over a substrate; a second source over the substrate and laterally adjacent to the first source; an isolation portion between the first source and the second source to electrically isolate the first source from the second source; a second channel-drain structure over the first source, the second channel-drain structure comprising a second channel and a second drain over the second channel; a third channel-drain structure over the second source and substantially parallel to the second channel-drain structure, the third channel-drain structure comprising a third channel and a third drain over the third channel; a gate dielectric layer surrounding the second channel and the third channel; a continuous gate surrounding the gate dielectric layer; and a second drain pad over and in contact with the second drain and the third drain.