发明名称 |
Method and system for chalcogenide-based nanowire memory |
摘要 |
Chalcogenide-based nanowire memories are implemented using a variety of methods and devices. According to an example embodiment of the present invention, a method of manufacturing a memory circuit is implemented. The method includes depositing nanoparticles at locations on a substrate. Chalcogenide-based nanowires are created at the locations on the substrate using a vapor-liquid-solid technique. Insulating material is deposited between the chalcogenide-based nanowires. Lines are created to connect at least some of the chalcogenide-based nanowires.
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申请公布号 |
US7405420(B1) |
申请公布日期 |
2008.07.29 |
申请号 |
US20060541464 |
申请日期 |
2006.09.29 |
申请人 |
THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY |
发明人 |
WONG H. S. PHILIP;MEISTER STEFAN;KIM SANGBUM;PENG HAILIN;ZHANG YUAN;CUI YI |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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