| 发明名称 | Light emitting diode with doped quantum wells and associated manufacturing method | ||
| 摘要 | A light emitting diode based on GaN including an active zone located between an n-doped layer and a p-doped layer that together form a p-n junction, wherein the active zone includes at least one n-doped emissive layer. | ||
| 申请公布号 | US9515220(B2) | 申请公布日期 | 2016.12.06 |
| 申请号 | US201514938058 | 申请日期 | 2015.11.11 |
| 申请人 | Commissariat a l'energie atomique et aux energies alternatives | 发明人 | Robin Ivan-Christophe |
| 分类号 | H01L33/04;H01L33/00;H01L33/32;H01L33/06;H01L33/18 | 主分类号 | H01L33/04 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A light emitting diode based on GaN, comprising an active zone located between an n-doped layer and a p-doped layer that together form a p-n junction, wherein the active zone comprises a plurality of emissive layers each sandwiched between two barrier layers, and wherein at least the emissive layer closest to the p-doped layer is an n-doped emissive layer sandwiched between two non-intentionally doped barrier layers, wherein the n doping level of the at least one n-doped emissive layer is greater than 1018 donors/cm3. | ||
| 地址 | Paris FR | ||