CHEMICALLY AMPLIFIED RESIST COMPOSITION

摘要

A chemically amplified resist composition is provided to improve resolution and line edge roughness and to enhance the application to ArF excimer laser lithography, KrF excimer laser lithography and ArF immersion lithography. A chemically amplified resist composition comprises a resin which comprises a structural unit having an acid-labile group and a structural unit represented by the formula 1, is insoluble or hardly soluble in an alkali aqueous solution but becomes soluble by the action of an acid; and at least two salts selected from a salt represented by the formula 2 and a salt represented by A'^+ SO3^- -R23, wherein R1 is H or a methyl group; X is a C3-C30 cyclic hydrocarbon group whose one -CH2- is substituted with -COO-; p is an integer of 1-4; Y1 and Y2 are independently F or a C1-C6 perfluoroalkyl group; A^+ is an organic counterion; R21 is a substituted or unsubstituted C1-C30 hydrocarbon group; R23 is a C1-C8 linear or branched perfluoroalkyl group whose at least one -CH2- can be substituted with -CO- or -O-; and A*^+ is an organic counterion.