发明名称 MASK FOR EXPOSURE
摘要 <p>PURPOSE:To provide a chromeless mask possible to transfer a pattern without reflecting a shape on the terminal part. CONSTITUTION:The 1st 90 deg.C phase shifter layer 5 is formed on a transparent substrate 1 and the 2nd 90 deg. phase shifter layer 2 is formed on the surface except terminal part of the phase shifter layer 5. And phase of incident light is shifted by 180 deg. on an exposure end face of the 1st and 2nd phase shifter layer 5, 2 and phase quantity in the terminal part of the 2nd shifter 2 is reduced.</p>
申请公布号 JPH05134389(A) 申请公布日期 1993.05.28
申请号 JP19910328124 申请日期 1991.11.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 MARIA OPU DE BETSUKU;HANAWA TETSUO
分类号 G03F1/34;G03F1/68;G03F7/20;H01L21/027 主分类号 G03F1/34
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