| 摘要 |
A method is described for forming multiple metal, spin-on-glass metallurgy with substantially free field inversion. A pattern of device regions are formed with a pattern of gate dielectric and gate electrode structures which are isolated from one another. A first passivation layer is formed over the patterns. The multilayer metallurgy is formed thereover by opening a pattern of openings through the passivation layer to some of the regions. A first metallurgy layer is deposited and patterned in contact with the pattern of openings. A first silicon oxide via dielectric layer is formed over the pattern of first metallurgy layer. A spin-on-glass layer is formed over the via dielectric layer and the layer is cured. A second oxide via dielectric layer is formed thereover. Openings are formed in the second via, spin-on-glass and first via layers. A second metallurgy layer is deposited and patterned in contact with the openings to make contact to the first metallurgy. A second dielectric layer is formed thereover. Finally, the structure is illuminated with ultra violet radiation for a time sufficient to neutralize the positive charges in the structure to give a substantially free field inversion integrated circuit.
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