发明名称 Manufacturing method of a semiconductor device
摘要 A non-leaded resin-sealed semiconductor device is manufactured by the steps of providing a metal substrate having a front surface, a rear surface, a chip fixing partition part, partition parts arranged around the chip fixing partition part, and grooves defined between the partition parts; providing a semiconductor chip having a front surface, a rear surface, electrodes formed on the front surface; fixing the semiconductor chip on the chip fixing partition part of the front surface of the metal substrate; electrically connecting the electrodes of the semiconductor chip with the front surface of the partition parts of the metal substrate by conductive wires, respectively; and forming a resin body which seals the semiconductor chip, the conductive wires, and the front surface of the partition parts of the metal substrate. After the resin body forming step, the rear surface of the metal substrate is etched so as to electrically isolate the partition parts of the metal substrate from one another, and after the etching step, the etched surface of the metal substrateis plated with solder by print-plating method.
申请公布号 US7407834(B2) 申请公布日期 2008.08.05
申请号 US20040902785 申请日期 2004.08.02
申请人 RENESAS TECHNOLOGY CORP.;HITACHI YONEZAWA ELECTRONICS CO., LTD. 发明人 SHIMANUKI YOSHIHIKO;SUZUKI MASAYUKI
分类号 H01L21/00;H01L23/12;H01L21/301;H01L21/304;H01L21/48;H01L21/56;H01L23/28;H01L23/31 主分类号 H01L21/00
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