| 摘要 |
<p>The invention concerns a method for obtaining a thin film from a substrate, the film bring delimited in the substrate by an ion implantation and by a thermal treatment inducing a line of fracture for separating the film from the rest of the substrate. A particular zone, for example consisting of the oxide film of the grid (15) and the channel zone (19) of a MOS transistor (12), having been produced on the substrate region (10) for forming the thin film (20), this zone can be protected from the ion implantation by masking with the transistor grid (16), which does not prevent the fracture from taking place as long as the zone does not exceed a predetermined limit dimension for the material constituting the substrate.</p> |
