发明名称 |
Epitaxial growth method |
摘要 |
An epitaxial growth method for forming a high-quality epitaxial growth semiconductor wafer is provided. The method includes forming a single crystalline layer on a single crystalline wafer; forming a mask layer having nano-sized dots on the single crystalline layer; forming a porous buffer layer having nano-sized pores by etching the mask layer and the surface of the single crystalline layer; annealing the porous buffer layer; and forming an epitaxial material layer on the porous buffer layer using an epitaxial growth process.
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申请公布号 |
US7407865(B2) |
申请公布日期 |
2008.08.05 |
申请号 |
US20060325462 |
申请日期 |
2006.01.05 |
申请人 |
SAMSUNG CORNING CO., LTD. |
发明人 |
PARK SUNG-SOO |
分类号 |
H01L21/76;C23C14/06;C23C16/34;H01L21/205 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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