发明名称 SURFACE TREATING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a surface treating device capable of forming a film high in quality at a high speed by preventing the film quality from being deteriorated due to the collision of charged particles. SOLUTION: The casing 2 of a surface treating device 1 is formed into two chambers of a plasma generating chamber 3 provided with plasma generating electrodes 5 and 5' and a substrate treating chamber 4 provided with a substrate supporting stand 8. A plasma blow-off port 6 is formed on the electrode 5' constituting the bulkhead of both chambers 3 and 4, and both chambers 3 and 4 are communicated. The nozzle shape of the plasma blow-off port 6 is set to the minimum cross-sectional area An of the blow-off port/the maximum cross-sectional area Ap of the plasma generating chamber <=1/2, the surface temp. of a substrate S is set to 100 to 550 deg.C, and the pressure in the substrate treating chamber 4 is set to 0.01 to 3 Torr.
申请公布号 JP2000045074(A) 申请公布日期 2000.02.15
申请号 JP19980210513 申请日期 1998.07.27
申请人 KOMATSU LTD 发明人 MIZUKAMI HIROYUKI;KOUSHIRI MASAYUKI;ISHIDA KOICHI
分类号 H05H1/46;C23C16/50;H01L21/205;H01L21/31;(IPC1-7):C23C16/50 主分类号 H05H1/46
代理机构 代理人
主权项
地址