METHOD OF FORMING CONDUCTIVE STRUCTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a conductive structure of a semiconductor. SOLUTION: The method includes a process of forming a lower conductive pattern on a semiconductor substrate and after the vapor deposition of a barrier metal film using a metal organic precursor, cleaning the vapor-deposited barrier metal film. It is desirable that the process of cleaning the barrier metal film is carried out using a process gas including a TiCl4gas and argon gas at a temperatures between 200°C and 500°C. COPYRIGHT: (C)2005,JPO&NCIPI