发明名称 |
Writing circuit for a phase change memory device |
摘要 |
A memory device of a phase change type, wherein a memory cell has a memory element of calcogenic material switcheable between at least two phases associated with two different states of the memory cell. A write stage is connected to the memory cell and has a capacitive circuit configured to generate a discharge current having no constant portion and to cause the memory cell to change state.
|
申请公布号 |
US2005041498(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
US20040870694 |
申请日期 |
2004.06.16 |
申请人 |
RESTA CLAUDIO;BEDESCHI FERDINANDO;PELLIZZER FABIO;CASAGRANDE GIULIO |
发明人 |
RESTA CLAUDIO;BEDESCHI FERDINANDO;PELLIZZER FABIO;CASAGRANDE GIULIO |
分类号 |
G11C7/00;G11C11/34;G11C16/02;G11C16/10;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|