| 摘要 |
PROBLEM TO BE SOLVED: To enable a semiconductor laser equipped with two or more light emitting areas on a substrate, to be manufactured through simpler processes, to reduce a waveguide loss, and to make its horizontal and vertical spreading angles identical to each other. SOLUTION: The semiconductor laser device is equipped with a red light emitter A, and an infrared light emitter B located on the same substrate 10. The red light emitter A has a structure composed of a first conductive first clad layer 14 with stripes 14a, a second conductive second clad layer 12, and an AlGaInP active layer 13 interposed between the layers 13 and 14. The infrared light emitter B has a structure composed of a first conductive third clad layer 24 with stripes 24a, a second conductive fourth clad layer 22, and an AlGaAs active layer 23 interposed between the layers 22 and 24. All the first, second, third and fourth clad layers, 14, 12, 24, and 22, belong to an AlGaInP system, and provided that the composition ratios of Al to Ga in the layers are successively represented by X1:1-X1, X2:1-X2, X3:1-X3, and X4:1-X4, X1, X2, X3, and X4 are set so as to satisfy formulas, X1≥X2 and X3≥X4. COPYRIGHT: (C)2008,JPO&INPIT
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