| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method and a plasma processing device which are capable of depositing a silicon nitride film having high compression stress. SOLUTION: In the plasma processing method, a nitride silicon film is grown on a substrate of processing object by plasma of material gas containing silicon as well as hydrogen and nitrogen gas. Ion energy for cutting the coupling status of hydrogen and nitrogen gas in the material gas or N-H cohesion is impressed on the substrate of processing object to reduce the amount of N-H cohesion contained in the film of silicon nitride film during growing the silicon nitride film. COPYRIGHT: (C)2008,JPO&INPIT
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