SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To sufficiently ensure the active area of a transistor by shrinking the layout of a substrate contact without mutual diffusion due to the substrate contact. SOLUTION: A distance B1 between a mask opening area B3 for injecting n-type impurities to the substrate contact 106 of a p-type MIS transistor and the active area 101b of a p-type MIS transistor is set larger than the distance A1 between a mask opening area A3 for injecting p-type impurities to the substrate contact 107 of an n-type MIS transistor and the active area 101a of the n-type MIS transistor. COPYRIGHT: (C)2008,JPO&INPIT