发明名称 |
FOCUSED ION BEAM DEVICE, SAMPLE CROSS SECTION MANUFACTURING METHOD, AND FLAKE SAMPLE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a sample cross section manufacturing method capable of efficiently detecting a center position of a defective part or a contact hole by an FIB device without having an SEM observation function. SOLUTION: While executing etching work by scanning and irradiating the vicinity of a sample cross section region with a focused ion beam 1, secondary ions 2 generated by the irradiation of the focused ion beam 1 are detected. The etching work is ended by detecting a work end point by a work end point detection mechanism 16 from a detected secondary electron signal. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008047489(A) |
申请公布日期 |
2008.02.28 |
申请号 |
JP20060224191 |
申请日期 |
2006.08.21 |
申请人 |
SII NANOTECHNOLOGY INC |
发明人 |
FUJII TOSHIAKI;ICHINOMIYA YUTAKA;TASHIRO JUNICHI |
分类号 |
H01J37/32;G01N1/28;G01N1/32;H01J37/305;H01J37/317 |
主分类号 |
H01J37/32 |
代理机构 |
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