发明名称 FOCUSED ION BEAM DEVICE, SAMPLE CROSS SECTION MANUFACTURING METHOD, AND FLAKE SAMPLE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a sample cross section manufacturing method capable of efficiently detecting a center position of a defective part or a contact hole by an FIB device without having an SEM observation function. SOLUTION: While executing etching work by scanning and irradiating the vicinity of a sample cross section region with a focused ion beam 1, secondary ions 2 generated by the irradiation of the focused ion beam 1 are detected. The etching work is ended by detecting a work end point by a work end point detection mechanism 16 from a detected secondary electron signal. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008047489(A) 申请公布日期 2008.02.28
申请号 JP20060224191 申请日期 2006.08.21
申请人 SII NANOTECHNOLOGY INC 发明人 FUJII TOSHIAKI;ICHINOMIYA YUTAKA;TASHIRO JUNICHI
分类号 H01J37/32;G01N1/28;G01N1/32;H01J37/305;H01J37/317 主分类号 H01J37/32
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