Method for fabricating a non-volatile memory device

摘要

A stacked non-volatile (SONOS) memory device (100) comprises a plurality of bitline (110) and wordline (120) layers stacked on top of each other. The bitline layers (110) comprise a plurality of bitlines that can be formed using advanced processing techniques making fabrication of the device efficient and cost effective. The device (100) can be configured for NAND operation.