发明名称 SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE CAPABLE OF REDUCING A STANDBY FAIL
摘要 A semiconductor memory device and a semiconductor device are provided, which reduce standby fail by controlling signal state of the peripheral circuit to the default state. A semiconductor memory device(200) comprises the shell core, one or more peripheral circuit(210) and initialized circuit(220). The shell core stores data. The peripheral circuit generates the signal for operating the shell core. The initialized circuit senses the action mode of the semiconductor memory device. The initialized circuit changes the signal state of the peripheral circuit into the default state according to the sensing result.
申请公布号 KR20090063562(A) 申请公布日期 2009.06.18
申请号 KR20070130981 申请日期 2007.12.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JIN WOOK;LEE, JIN YUB
分类号 G11C7/20;G11C5/14 主分类号 G11C7/20
代理机构 代理人
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