FILM QUALITY MANAGEMENT METHOD OF OXIDE SEMICONDUCTOR THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method capable of qualitatively or quantitatively evaluating the quality of a BCE process or the quality of a passivation insulation film after the BCE process in a non-contact, non-destructive manner.SOLUTION: There is provided a method for indirectly monitoring the change on an oxide semiconductor thin film surface generated at the time of removing a metal thin film on a channel region of a thin film transistor by patterning with wet etching or dry etching the metal thin film directly laminated on the oxide semiconductor thin film formed on a substrate, and monitoring the conductivity change of the oxide semiconductor thin film as the reflectivity change of a micro wave by irradiating the oxide semiconductor thin film surface with laser light.SELECTED DRAWING: Figure 6