发明名称 |
Adaptive read error recovery for memory devices |
摘要 |
An error of a solid-state non-volatile memory is detected. It is determined whether a type of the error is a first type of error. A voltage recovery process is bypassed based on whether the error is the first type of error. If it is determined that the error is a catastrophic error, the voltage error recovery process is bypassed. If it is determined that an offset of a threshold voltage is not greater than a predetermined value, the voltage error recovery process is bypassed. |
申请公布号 |
US9378083(B2) |
申请公布日期 |
2016.06.28 |
申请号 |
US201314096733 |
申请日期 |
2013.12.04 |
申请人 |
Seagate Technology LLC |
发明人 |
Ghaly Mai A.;Patapoutian Ara |
分类号 |
G06F11/00;G06F11/07;G06F1/28;G11C11/56 |
主分类号 |
G06F11/00 |
代理机构 |
Hollingsworth Davis, LLC |
代理人 |
Hollingsworth Davis, LLC |
主权项 |
1. A method, comprising:
detecting an error of a solid-state, non-volatile memory; determining whether a type of the error is a first type of error; and bypassing a voltage error recovery process based on whether the error is the first type of error. |
地址 |
Cupertino CA US |