发明名称 Adaptive read error recovery for memory devices
摘要 An error of a solid-state non-volatile memory is detected. It is determined whether a type of the error is a first type of error. A voltage recovery process is bypassed based on whether the error is the first type of error. If it is determined that the error is a catastrophic error, the voltage error recovery process is bypassed. If it is determined that an offset of a threshold voltage is not greater than a predetermined value, the voltage error recovery process is bypassed.
申请公布号 US9378083(B2) 申请公布日期 2016.06.28
申请号 US201314096733 申请日期 2013.12.04
申请人 Seagate Technology LLC 发明人 Ghaly Mai A.;Patapoutian Ara
分类号 G06F11/00;G06F11/07;G06F1/28;G11C11/56 主分类号 G06F11/00
代理机构 Hollingsworth Davis, LLC 代理人 Hollingsworth Davis, LLC
主权项 1. A method, comprising: detecting an error of a solid-state, non-volatile memory; determining whether a type of the error is a first type of error; and bypassing a voltage error recovery process based on whether the error is the first type of error.
地址 Cupertino CA US
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