| 摘要 |
PROBLEM TO BE SOLVED: To provide a junction barrier Schottky rectifier with improved capabilities to handle surge currents.SOLUTION: A junction barrier Schottky rectifier comprises: first conductivity type drift layers 132A, 132B on a substrate layer 1 and having a lower peak net doping concentration than the substrate layer 1; and a plurality of emitter regions 133 in the drift layers 132A, 132B adjoining a first main side 4. Each emitter region 133 has a conductivity type different from the first conductivity type. The junction barrier Schottky rectifier further comprises: a first metal contact layer 5 forming a Schottky contact with the drift layers 132A, 132B on the first main side 4 and an ohmic contact with each one of the emitter regions 133; and a second metal contact layer 6 forming an ohmic contact with the substrate layer 1 on a second main side 7 of the junction barrier Schottky rectifier opposite to the first main side 4.SELECTED DRAWING: Figure 13 |
