| 发明名称 | Memory system and method of operating the same | ||
| 摘要 | A memory system includes a memory device, a plurality of memory blocks which include a plurality of memory cells electrically coupled to a plurality of word lines and store data requested from a host; and a controller suitable for programming first data in a first memory cell among the plurality of memory cells based on a write command received from the host, determining a read voltage of the first memory cell, and reading the first data programmed in the first memory cell based on the read voltage in response to a read command received from the host. | ||
| 申请公布号 | US9390806(B1) | 申请公布日期 | 2016.07.12 |
| 申请号 | US201514717623 | 申请日期 | 2015.05.20 |
| 申请人 | SK Hynix Inc. | 发明人 | Hong Ji-Man |
| 分类号 | G11C7/04;G11C16/26;G11C16/10 | 主分类号 | G11C7/04 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A memory system comprising: a memory device including a plurality of memory blocks which include a plurality of memory cells electrically coupled to a plurality of word lines and store data requested from a host; and a controller suitable for programming first data in a first memory cell among the plurality of memory cells based on a write command received from the host, determining a read voltage of the first memory cell, and reading the first data programmed in the first memory cell based on the read voltage in response to a read command received from the host, wherein the controller determines the read voltage by checking a data program temperature when programming the first data in the first memory cell and checking a data read temperature when reading the programmed first data from the first memory cell. | ||
| 地址 | Gyeonggi-do KR | ||