METHOD OF FORMING MINUTE PATTERNS AND METHOD MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

The purpose of the present invention is to provide a method for forming a fine pattern having regions with different widths, comprising: sequentially forming a first etching subject film and a first mask film on a substrate including first and second regions; forming multiple sacrificial patterns, which are formed on the first mask film and individually extended in a first direction, in a second direction intersecting with the first direction; forming spacers on both lateral walls of each sacrificial pattern; forming first masks by etching the first mask film by using the spacers as an etching mask after removing the sacrificial patterns; defining third masks individually containing second masks by forming the second masks on both lateral walls of each first mask on the second region; and forming first patterns with a first width in the second direction on the first region, and second patterns with a second width wider than the first width in the second direction on the second region by etching the first etching subject film using the first and third masks as the etching mask.