| 摘要 |
A semiconductor single crystal manufacturing apparatus capable of lowering the local deterioration of a wire under high temperature atmosphere in the furnace of a chamber, wherein a crucible ( 24 ) in which silicon melt ( 28 ) is filled is installed in the furnace of the chamber ( 22 ), a pull-chamber ( 23 ) is disposed above the chamber ( 22 ), and a seed holder ( 32 ) lifting between the inside of the pull-chamber ( 23 ) and the inside of the furnace is suspended by a wire ( 50 ) through a coupling member ( 31 ). A collar ( 52 ) is fitted to the wire ( 50 ) so that, when the seed holder ( 32 ) is positioned to touch the melt, the exposed portion of the wire ( 50 ) near the tip thereof becomes a specified temperature or below under the high temperature atmosphere in the furnace.
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