Temperature dependent voltage to unselected drain side select transistor during program of 3D NAND

摘要

Techniques are provided for reducing program disturb in a 3D memory device. The techniques include compensating for a temperature dependence of program disturb. The techniques may include compensating for how program disturb depends on the location of the word line that is selected for programming. In one aspect, the voltage that is applied to the control gates drain side select transistors of unselected NAND strings is adjusted during programming based on temperature. Greater temperature compensation may be applied when the selected word line is closer to the drain side select transistors.

主权项

1. A non-volatile storage device, comprising:
a plurality of word lines; a plurality of bit lines; a plurality of NAND strings in a three dimensional memory array, each of the NAND strings comprising a drain side select transistor coupled to a bit line of the plurality of bit lines, each of the NAND strings being associated with a group of the plurality of word lines; and managing circuitry in communication with the plurality of word lines, the plurality of bit lines, and the drain side select transistors of the plurality of NAND strings, wherein the managing circuitry is configured to generate an unselect voltage that has a magnitude that depends on temperature and location of a selected word line along an unselected NAND string, wherein the managing circuitry is configured to apply the unselect voltage to a control gate of the drain side select transistor of the unselected NAND string while a programming voltage is applied to the selected word line, while a boosting voltage is applied to unselected word lines associated with the unselected NAND string, and while a voltage is applied to a bit line associated with the unselected NAND string.