SEMICONDUCTOR DEVICE

摘要

A semiconductor device is provided. The semiconductor device includes a first transistor on a first side of a shallow trench isolation (STI) region and a second transistor on a second side of the STI region. The first transistor includes a first conductive portion having a second conductivity type formed within a well having a first conductivity type, a first nanowire connected to the first conductive portion and a first active area, and a first gate surrounding the first nanowire. The second transistor includes a second conductive portion having the second conductivity type formed within the well, a second nanowire connected to the second conductive portion and a second active area, and a second gate surrounding the second nanowire. Excess current from an ESD event travels through the first conductive portion through the well to the second conductive portion bypassing the first nanowire and the second nanowire.

主权项

1. A semiconductor device comprising:
a well having a first conductivity type; a first conductive portion disposed between a first pair of adjacent shallow trench isolation (STI) regions, wherein:
the first conductive portion is in contact with the well, andthe first conductive portion has a second conductivity type different than the first conductivity type; a first nanowire in contact with the first conductive portion; a first silicide region disposed between the first pair of adjacent STI regions, wherein:
the first silicide region is in contact with the first conductive portion, andthe first silicide region is disposed on a first side of the first nanowire; and a second silicide region disposed between the first pair of adjacent STI regions, wherein:
the second silicide region is in contact with the first conductive portion,the second silicide region is disposed on the first side of the first nanowire, andthe first silicide region is spaced apart from the second silicide region.