发明名称 NONVOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME, AND OPERATION METHOD THEREOF
摘要 A method of operating a nonvolatile memory device is provided as follows. The nonvolatile memory device includes memory blocks each of which has word lines. A setup voltage is applied to the word lines. A word line voltage is applied to a first word line selected from the word lines. Recovery voltages are applied to the word lines. Each recovery voltage is applied to at least one corresponding word line of the word lines. The recovery voltages have different voltage levels from each other.
申请公布号 US2016260489(A1) 申请公布日期 2016.09.08
申请号 US201615003113 申请日期 2016.01.21
申请人 LEE CHEON AN;PARK MU-HUI;CHO JIHO;LEE JI-YOUNG;CHOI YOON-HEE 发明人 LEE CHEON AN;PARK MU-HUI;CHO JIHO;LEE JI-YOUNG;CHOI YOON-HEE
分类号 G11C16/16;G11C16/04;G11C16/26 主分类号 G11C16/16
代理机构 代理人
主权项 1. A method of operating a nonvolatile memory device including a plurality of memory blocks, each memory block having a plurality of word lines, the method comprising: applying a setup voltage to the word lines; applying a word line voltage to a first word line selected from the word lines; and applying a plurality of recovery voltages to the word lines, wherein each recovery voltage is applied to at least one corresponding word line of the word lines, and wherein the recovery voltages have different voltage levels from each other.
地址 Suwon-si KR