INTEGRATED CIRCUIT DIE AND MANUFACTURING METHOD THEREFOR

摘要

Embodiments of the present invention provide an IC die and a manufacturing method therefor, for use in resolving the problem of the limitations of existing IC chip heat radiation methods in reducing the temperature of hot spots on the surface of IC chips. The IC die comprises a substrate, an active device, an interconnection layer, and a heat radiation layer. The interconnection layer covers the active device. The interconnection layer comprises multiple metal layers and multiple dielectric layers. The multiple metal layers and the multiple dielectric layers are alternately disposed. One metal layer among the multiple metal layers furthest from the active device comprises a metal wire and a metal bonding pad. The heat radiation layer covers the remainder of the interconnection layer except a region corresponding to the position of the metal bonding pad. The heat radiation layer is located below the encapsulation layer. The encapsulation layer comprises a plastic packaging material. The heat radiation layer comprises an electrically insulating material, the heat conductivity of which is greater than a preset value.