发明名称 High-frequency amplifier
摘要 There is provided a high-frequency amplifier including a divider, a plurality of amplifiers for amplifying a high-frequency signal distributed by the divider and outputting the amplified high-frequency signal, a combiner for combining amplified high-frequency signals, a base substrate, a conductor pattern that is connected to a ground end of each of the amplifiers, and a ground electrode. Each of the conductor patterns has a first conductive portion. A slot is disposed between the two conductor patterns connected to the corresponding adjacent amplifiers. Between the adjacent amplifiers, two vias are formed so that the slot is sandwiched between the vias. One of the two conductor patterns is connected to the ground electrode via one of the two vias, and the other one of the conductor patterns is connected to the ground electrode via the other one of the two vias.
申请公布号 US9503035(B2) 申请公布日期 2016.11.22
申请号 US201414571929 申请日期 2014.12.16
申请人 TDK CORPORATION 发明人 Shibuya Tomohiko;Ajioka Atsushi;Tsumita Atsushi;Yoneda Sadaharu
分类号 H03F3/68;H03F3/193;H03F3/21;H03F3/24;H03F3/195 主分类号 H03F3/68
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A high-frequency amplifier comprising: a divider for distributing an input high-frequency signal; a plurality of parallel-connected amplifiers for amplifying a high-frequency signal distributed by the divider and outputting the amplified high-frequency signal; a combiner for combining high-frequency signals amplified by the amplifiers; a substrate on which the amplifiers are disposed; a conductor pattern connected to a ground end of each of the amplifiers; and a ground electrode, wherein the conductor pattern has a first conductive portion extending in a direction in which the amplifiers are adjacent to each other, wherein a slot is disposed between two conductor patterns connected to corresponding adjacent ones of the amplifiers, wherein, between the adjacent amplifiers, two vias passing through the substrate are formed so that the slot is sandwiched between the vias, wherein one of the two conductor patterns connected to the corresponding adjacent amplifiers is connected to the ground electrode via one of the two vias, and the other one of the two conductor patterns connected to the corresponding adjacent amplifiers is connected to the ground electrode via the other one of the two vias, and wherein a length of the slot is substantially equal to or less than a half-wavelength of a high-frequency signal used.
地址 Tokyo JP