| 发明名称 |
RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS |
| 摘要 |
A method is provided for at least partially filling a feature in a substrate. The method includes providing a substrate containing a feature, depositing a ruthenium (Ru) metal layer to at least partially fill the feature, and heat-treating the substrate to reflow the Ru metal layer in the feature. |
| 申请公布号 |
WO2016196937(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
WO2016US35724 |
申请日期 |
2016.06.03 |
| 申请人 |
TOKYO ELECTRON LIMITED;TOKYO ELECTRON U.S. HOLDINGS, INC. |
发明人 |
YU, Kai-Hung;LEUSINK, Gerrit J.;WAJDA, Cory;ISHIZAKA, Tadahiro;HAKAMATA, Takahiro |
| 分类号 |
H01L21/28;C23C16/16;C23C16/455;C23C16/46;H01L21/285 |
主分类号 |
H01L21/28 |
| 代理机构 |
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