Transistor including a stressed channel, a method for fabricating the same, and an electronic device including the same

摘要

A semiconductor device includes a first channel, a second channel, a first strained gate electrode including a first lattice-mismatched layer for applying a first stress to the first channel, and a second strained gate electrode including a second lattice-mismatched layer for applying a second stress to the second channel.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
preparing a substrate which includes a first transistor region and a second transistor region; forming a first strained gate electrode which includes a first lattice-mismatched crystalline silicon layer disposed over the first transistor region; and forming a second strained gate electrode which includes a second lattice-mismatched crystalline silicon layer disposed over the second transistor region, wherein the forming of the first lattice-mismatched crystalline silicon layer comprises:
forming an arsenic-doped crystalline silicon layer by doping only arsenic; andforming an undoped crystalline silicon layer disposed over the arsenic-doped crystalline silicon layer, the undoped crystalline silicon layer being undoped with arsenic, and wherein the forming of the second lattice-mismatched crystalline silicon layer comprises:
forming a boron-doped crystalline silicon layer; andforming a germanium-doped crystalline silicon layer, the germanium-doped crystalline silicon layer being disposed over the boron-doped crystalline silicon layer.