PHOTOSENSITIVE COMPOSITION

摘要

PURPOSE: To form an image withstanding reactive ion etching with oxygen plasma and having high resolution by using a positive photoresist contg. an organosilicon compd. having quinonediazo groups as terminal groups and a phenolic novolak polymer in a specified ratio. CONSTITUTION: This photoresist contains an organosilicon compd. having quinonediazo groups as terminal groups and a phenolic novolak polymer. The amt. of the organosilicon compd. is about 5-50wt.%, preferably about 10-30wt.% of the total amt. of the organosilicon compd. and the phenolic novolak polymer. An image withstanding dry processing, especially reactive ion etching in oxygen plasma and having high resolution can be formed.