| 摘要 |
PROBLEM TO BE SOLVED: To provide a growth unit designed to afford a continuous and large- diameter single crystal through raising the radial growth rate of the single crystal. SOLUTION: This growth unit has such a scheme that, a silicon carbide single crystal substrate 5 serving as a seed crystal is placed opposite to silicon carbide powder 4 as feedstock in a crucible 2; between the substrate 5 and the silicon carbide powder 4, a heat-shielding member 6 enclosing the substrate 5 so that a gas is passable under the substrate 5 and defining a space inside where a single crystal grows is set up to ensure a silicon carbide single crystal 7 to be grown while shielding the substrate 5 from the radiant heat emitted from the silicon carbide powder 4; wherein the heat-shielding member 6 is tapered so that its diameter becomes larger downward, that is, the diameter of the above-mentioned space becomes larger toward the side of the silicon carbide powder 4, thereby ensuring the radial growth of the single crystal to be greater through suppressing the change in the temperature gradient in the vicinity of the side face of the silicon carbide single crystal 7.
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