| 摘要 |
An isolation structure on an integrated circuit is formed using a shallow trench isolation process. On a substrate, a trench is formed. A thermal anneal is performed to oxidize exposed areas of the substrate to provide for round corners at a perimeter of the trench. The thermal anneal in performed in an ambient where a chlorine source is added to O2 in order to minimize facets while creating the round corners. Oxidation time is lengthened by introducing an inert gas during the thermal anneal.
|
