AMORPHOUS SILICON WAVEGUIDES ON III/V SUBSTRATES WITH A BARRIER LAYER

摘要

An optical device and a method of forming the same is described. The optical waveguide includes a substrate, an etch-stop layer adjacent to the substrate, a barrier layer adjacent to the etch-stop layer, and an active waveguide having a lower cladding layer adjacent to the barrier layer. Also described is a method of coupling to at least one active waveguide. The method includes etching an active waveguide with a high selectivity towards a crystallographic plane to form a sloped terminice with respect to a substrate upon which the active waveguide is formed, and depositing at least one other waveguide over the etched sloped terminice and at least a portion of the substrate, wherein the at least one other waveguide is photonically coupled to the etched active waveguide to provide photonic interconnectivity for the etched active waveguide.