发明名称 |
Apparatus and method for thin film deposition |
摘要 |
Disclosed herein is a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor. The apparatus comprises: a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas; a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process; a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means; a rotation driving means for rotating the gas retaining means such that the gases retained in the respective reaction cells are exposed to the substrates in sequence; and a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber.
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申请公布号 |
US2007095286(A1) |
申请公布日期 |
2007.05.03 |
申请号 |
US20050559944 |
申请日期 |
2005.07.20 |
申请人 |
BAEK YONG-KU;LEE SEUNG-HOON |
发明人 |
BAEK YONG-KU;LEE SEUNG-HOON |
分类号 |
C23C16/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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